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Volumn 2005, Issue , 2005, Pages 343-346

In0.53Ga0.47As/InP type-I DHBTs w/100 nm collector and 491GHz f, 415 GHZ fmax

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRON TRANSITIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES;

EID: 33747435812     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517497     Document Type: Conference Paper
Times cited : (5)

References (11)
  • 1
    • 0005413227 scopus 로고    scopus 로고
    • Prospects of InP-based IC technologies for 100-Gbit/s-class lightwave communications systems
    • T. Enoki et al., "Prospects of InP-based IC technologies for 100-Gbit/s-class lightwave communications systems", International Journal of High Speed Electronics and Systems, Vol. 11, No. 1, pp. 137-158, 2001
    • (2001) International Journal of High Speed Electronics and Systems , vol.11 , Issue.1 , pp. 137-158
    • Enoki, T.1
  • 2
    • 0000270710 scopus 로고    scopus 로고
    • Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs
    • M.J.W. Rodwell et al., International Journal of High Speed Electronics and Systems, "Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs" Vol. 11, No. 1, pp. 159-215, 2001
    • (2001) International Journal of High Speed Electronics and Systems , vol.11 , Issue.1 , pp. 159-215
    • Rodwell, M.J.W.1
  • 4
    • 0041385870 scopus 로고    scopus 로고
    • Wideband DHBTs using a graded carbon-doped InGaAs base
    • M. Dahlström et at., "Wideband DHBTs Using a Graded Carbon-Doped InGaAs Base" IEEE Electron Device Letters, vol. 24, no. 7, pp. 433-435, 2003
    • (2003) IEEE Electron Device Letters , vol.24 , Issue.7 , pp. 433-435
    • Dahlström, M.1
  • 5
    • 0346394363 scopus 로고    scopus 로고
    • High-speed InP/InGaAs DHBTs with a thin pseudomorphic base
    • San Diego, CA, 9-12 Nov.
    • M. Ida et al., "High-Speed InP/InGaAs DHBTs with a Thin Pseudomorphic Base" Conference Proceedings IEEE GaAs IC, San Diego, CA, 9-12 Nov. pp. 211-214, 2003
    • (2003) Conference Proceedings IEEE GaAs IC , pp. 211-214
    • Ida, M.1
  • 6
    • 0242412463 scopus 로고    scopus 로고
    • Typc-II base-collector performance advantages and limitations in high-speed NpN double heterojunction bipolar transistors (DHBTs)
    • October
    • C.R. Bolognesi et al., "Typc-II Base-Collector Performance Advantages and Limitations in High-Speed NpN Double Heterojunction Bipolar Transistors (DHBTs)", IEICE Trans. Electron., Vol. E86-C, No. 10, October, 2003
    • (2003) IEICE Trans. Electron. , vol.E86-C , Issue.10
    • Bolognesi, C.R.1
  • 9
    • 20144387253 scopus 로고    scopus 로고
    • Ultra high frequency static dividers > 150 GHz in a narrow mesa InGaAs/InP DHBT technology
    • Montreal, Canada, 13-14 September
    • Z. Griffith et al., "Ultra High Frequency Static Dividers > 150 GHz in a Narrow Mesa InGaAs/InP DHBT Technology", Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Montreal, Canada, 13-14 September, 2004
    • (2004) Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting
    • Griffith, Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.