In0.53Ga0.47As/InP type-I DHBTs w/100 nm collector and 491GHz f, 415 GHZ fmax

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 343-346

  Griffith, Zach ^a   Dahlström, Mattias ^a,c   Rodwell, Mark J W ^a   Fang, Xiao Ming ^b   Loubychev, Dmitri ^b   Wu, Ying ^b   Fastenau, Joel M ^b   Liu, Amy W K ^b  

^a Santa Barbara   (United States)

^b IQE INC   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRON TRANSITIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES;

BASE-COLLECTOR GRADE; BASE-COLLECTOR TRANSITION; DC CURRENT GAIN; DRIFT COLLECTOR; ELECTRON TRANSIT TIME;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33747435812     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517497     Document Type: Conference Paper

References (11)

1. T. Enoki et al., "Prospects of InP-based IC technologies for 100-Gbit/s-class lightwave communications systems", International Journal of High Speed Electronics and Systems, Vol. 11, No. 1, pp. 137-158, 2001
2. M.J.W. Rodwell et al., International Journal of High Speed Electronics and Systems, "Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs" Vol. 11, No. 1, pp. 159-215, 2001
3. C. Nguyen et al., "Bandgap Engineered InP-Based Power Double Heterojunction Bipolar Transistors", Proceedings IEEE International Conference on Indium Phosphide and Related Materials, Cape Cod, MA, pp. 15-19, May, 1997
4. M. Dahlström et at., "Wideband DHBTs Using a Graded Carbon-Doped InGaAs Base" IEEE Electron Device Letters, vol. 24, no. 7, pp. 433-435, 2003
5. M. Ida et al., "High-Speed InP/InGaAs DHBTs with a Thin Pseudomorphic Base" Conference Proceedings IEEE GaAs IC, San Diego, CA, 9-12 Nov. pp. 211-214, 2003
6. C.R. Bolognesi et al., "Typc-II Base-Collector Performance Advantages and Limitations in High-Speed NpN Double Heterojunction Bipolar Transistors (DHBTs)", IEICE Trans. Electron., Vol. E86-C, No. 10, October, 2003
7. H.J. Zhu et al., "GaAsSb-Based HBTs Grown By Production MBE System", Proceedings IEEE International Conference on Indium Phosphide and Related Materials, Kagoshima, Japan, 31 May - 4 June, pp. 338-341, 2004
8. max", IEEE Electron Device Letters, vol. 26, no. 1, pp. 11-13, 2005
9. Z. Griffith et al., "Ultra High Frequency Static Dividers > 150 GHz in a Narrow Mesa InGaAs/InP DHBT Technology", Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Montreal, Canada, 13-14 September, 2004
10. -1 IC's" IEEE Transactions on Electron Devices, vol. 51, no. 4, pp. 529-534, 2004
11. W. Liu, Handbook of III- V Heterojunction Bipolar Transistors, John Wiley and Sons Inc., 1998