Bandgap engineered InP-based power double heterojunction bipolar transistors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 15-19

  Nguyen, Chanh ^a   Liu, Takyiu ^a   Chen, Mary ^a,a   Virk, Robinder ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

DELTA DOPING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030653811     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)