Wideband DHBTs using a graded carbon-doped InGaAs base

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 433-435

  Dahlstrom M ^a   Fang, X M ^b   Lubyshev, D ^b   Urteaga, M ^a   Krishnan, S ^a   Parthasarathy, N ^a   Kim, Y M ^a   Wu, Y ^b   Fastenau, J M ^b   Liu, W K ^b   Rodwell, M J W ^a  

^a University of California   (United States)

^b IQE INC   (United States)

Author keywords

Carbon doping; Heterojunction bipolar transistor; Palladium

Indexed keywords

CARBON; ELECTRIC CONDUCTIVITY; OHMIC CONTACTS; PALLADIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

CARBON DOPING; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; INDIUM ALUMINUM ARSENIDE; OHMIC CONTACT RESISTIVITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0041385870     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815009     Document Type: Letter

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