Improved lithographic performance with ultra-thin 193 nm resist

Journal of Photopolymer Science and Technology

Volumn 19, Issue 3, 2006, Pages 313-318

  Choi, Namuk ^a   Jae, Hyun Kim ^a   Kim, Young Ho ^a   Kim, Tae Sung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

193nm lithography; Depth of focus (DOF); Line edge roughness (LER); Photo acid generator (PAG); Ultra thin photoresist

Indexed keywords

EID: 33747428068     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.19.313     Document Type: Article

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