Nanocrystalline silicon superlattices: Building blocks for quantum devices

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 303-308

  Tsybeskov, L ^a   Grom, G F ^b   Jungo, M ^a   Montes, L ^b   Fauchet, P M ^a   McCaffrey, J P ^b   Baribeau, J M ^b   Sproule, G I ^a   Lockwood, D J ^a  

^a University of Rochester   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; INTERFACES (MATERIALS); MICROANALYSIS; PARTICLE SIZE ANALYSIS; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SUPERLATTICES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

AUGER ELEMENTAL MICROANALYSIS; CAPACITANCE-VOLTAGE CHARACTERISTIC; CONDUCTANCE TUNNEL SPECTROSCOPY; QUANTUM DEVICES; X RAY SMALL ANGLE REFLECTION;

NANOSTRUCTURED MATERIALS;

EID: 0033881935     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00292-5     Document Type: Article

References (11)

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