Improved charge injection in Si nanocrystal non-volatile memories

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 899-902

  Carreras, Josep ^a   Garrido, B ^a   Morante, J R ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CHARGE INJECTION; NON-VOLATILE MEMORIES (NVM); RETENTION TIMES; SILICON NANOCRYSTALS;

DATA STORAGE EQUIPMENT;

EID: 14644445217     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.028     Document Type: Conference Paper

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