Explanation of anomalously high current gain observed in GaN based bipolar transistors

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 4-6

  Xing, H ^a   Jena, D ^a   Rodwell, M J W ^a   Mishra, U K ^a  

^a Santa Barbara   (United States)

Author keywords

Bipolar transistors; Common emitter; Current gain; GaN; Gummel plot; HBT; Leakage currents

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; GALLIUM NITRIDE; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OHMIC CONTACTS; TRANSMISSION LINE THEORY;

ADVANCED DESIGN SYSTEM; COLLECTOR CURRENT; CURRENT GAIN; GUMMEL PLOT; TRANSMISSION LINE METHOD;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037247517     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807023     Document Type: Letter

References (18)

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