Sulfur and low-temperature SiNx passivation of self-aligned graded-base InGaAs/InP heterostructure bipolar transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1060-1066

  Jin, Zhi ^a   Prost, W ^a   Neumann, S ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; DIODES; DOPING (ADDITIVES); ENERGY UTILIZATION; EPITAXIAL GROWTH; INDIUM COMPOUNDS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; OPTOELECTRONIC DEVICES; PASSIVATION; SILICA; SILICON NITRIDE; THERMAL EFFECTS;

CHEMICAL ETCHING; COLLECTOR CURRENT; CURRENT GAIN; GUMMEL PLOTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 3242689899     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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