Current gain increase by SiNx passivation in self-aligned InGaAs/InP heterostructure bipolar transistor with compositionally graded base

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1637-1641

  Jin, Z ^a   Otten, F ^a   Reimann, T ^a   Neumann, S ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE;

EMITTER JUNCTIONS; IDEALITY FACTORS; ROOM TEMPERATURE; SURFACE QUALITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 2942676980     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.03.019     Document Type: Conference Paper

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