Current transport mechanisms and their effects on the performances of InP-based double heterojunction bipolar transistors with different base structures

Applied Physics Letters

Volumn 84, Issue 15, 2004, Pages 2910-2912

  Jin, Zhi ^a   Prost, W ^a   Neumann, S ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ETCHING; GAIN MEASUREMENT; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT;

CURRENT GAIN; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); REVERSE GUMMEL PLOTS; TERMINAL CURRENTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 2342590720     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695638     Document Type: Article

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