In situ X-ray photoelectron spectroscopy study of etch chemistry of methane-based reactive ion beam etching of InP using N2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2757-2761

  Jin, Z ^a   Hashizume, T ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

CH4; InP; N2; RIBE; XPS

Indexed keywords

CHEMICAL BONDS; EVAPORATION; ION BEAMS; METHANE; NANOSTRUCTURED MATERIALS; NITROGEN; RAMAN SCATTERING; SEMICONDUCTING INDIUM PHOSPHIDE; STOICHIOMETRY; SURFACE ROUGHNESS;

SURFACE SMOOTHNESS;

REACTIVE ION ETCHING;

EID: 0035300722     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2757     Document Type: Article

References (14)