Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 341-345

  Toda, Akio ^a   Ikarashi, Nobuyuki ^a   Ono, Haruhiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRON DIFFRACTION; ELECTRON SCATTERING; LEAST SQUARES APPROXIMATIONS; OXIDATION; RELAXATION PROCESSES; SEMICONDUCTING SILICON; STRAIN MEASUREMENT;

CONVERGENT-BEAM ELECTRON DIFFRACTION; LOCAL OXIDATION OF SILICON (LOCOS);

SEMICONDUCTOR DEVICES;

EID: 0033888110     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00707-1     Document Type: Article

References (12)

1. Hu S.H. J. Appl. Phys. 70:1991;R53.
2. Vanhellemont J., Amelinckx S., Claeys C.J. J. Appl. Phys. 61:1987;2176.
3. De Wolf I., Norström H., Maes H.E. J. Appl. Phys. 74:1993;4490.
4. Ando Y., Patel J.R., Kato N. J. Appl. Phys. 44:1973;4405.
5. Tanaka M., Terauchi M., Tsuda K. Convergent-Beam Electron Diffraction III. 1994;285 JEOL, Tokyo.
6. Kimoto K., Usami K., Sakata H., Tanaka M. Jpn. J. Appl. Phys. 32:1993;L211.
7. Vanhellemont J., De Wolf I., Jannsens K.G.F., Frabboni S., Balboni R., Armigliato A. Appl. Surf. Sci. 63:1993;119.
8. Kelly P., Jostsons A., Blake R.G., Napier J.G. Phys. Stat. Sol. (a). 31:1975;771.
9. Banhart F. Ultramicroscopy. 56:1994;233.
10. Zuo J.M. Ultramicroscopy. 41:1992;211.
11. EerNisse E.P. Appl. Phys. Lett. 30:1977;290.
12. Sunami H., Itoh Y., Sato K. J. Appl. Phys. 41:1970;5115.