Effect of deposition parameters on the growth rate and dielectric properties of the Ba(SnxTi1-x)O3 thin films prepared by radio frequency magnetron sputtering

Journal of the European Ceramic Society

Volumn 26, Issue 15, 2006, Pages 3211-3219

  Huang, Hong Hsin ^a   Wang, Moo Chin ^b,d   Chen, Chung Yuan ^c   Wu, Nan Chung ^c   Lin, Huey Jiuan ^d  

^a CHENG SHIU UNIVERSITY   (Taiwan)

^b NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

BaTiO3 and titanates; Capacitors; Dielectric properties; Ferroelectric properties; Films

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRODEPOSITION; FILM GROWTH; MAGNETRON SPUTTERING; MATHEMATICAL MODELS; REFRACTIVE INDEX;

DEPOSITION PARAMETERS; FEEROELECTRIC PROPERTIES; FILM GROWTH RATE; RADIO FREQUENCY MAGNETRON SPUTTERING;

FERROELECTRIC THIN FILMS;

DIELECTRIC PROPERTIES; ELECTRODEPOSITION; FERROELECTRIC THIN FILMS; FILM GROWTH; MAGNETRON SPUTTERING; MATHEMATICAL MODELS; REFRACTIVE INDEX;

EID: 33747333396     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2005.09.109     Document Type: Article

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