Dielectric properties of Ba(ZrxTi1 - x)O3thin films prepared using radio frequency magnetron sputtering

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 598-604

  Hsi, Chi Shiung ^a   Chen, Chung Yi ^b   Wu, Nan Chung ^b   Wang, Moo Chin ^c  

^a I SHOU UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BARIUM COMPOUNDS; CAPACITANCE; CAPACITORS; CURRENT DENSITY; DEPOSITION; FILM PREPARATION; HYSTERESIS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PERMITTIVITY; PHASE TRANSITIONS;

PARAELECTRIC CHARACTERISTICS;

THIN FILMS;

EID: 0042341678     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1574179     Document Type: Article

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