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Volumn 252, Issue 19, 2006, Pages 7243-7246

Narrow surface transient and high depth resolution SIMS using 250 eV O 2 +

Author keywords

Depth resolution; Roughening; Secondary ion mass spectroscopy; Ultralow energy

Indexed keywords

ION BEAMS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SPUTTERING; SURFACE ROUGHNESS;

EID: 33747201119     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.198     Document Type: Article
Times cited : (7)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.