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Volumn 252, Issue 19, 2006, Pages 7243-7246
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Narrow surface transient and high depth resolution SIMS using 250 eV O 2 +
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Author keywords
Depth resolution; Roughening; Secondary ion mass spectroscopy; Ultralow energy
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Indexed keywords
ION BEAMS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
SPUTTERING;
SURFACE ROUGHNESS;
DEPTH RESOLUTION;
PRIMARY IONS;
ROUGHENING;
ULTRALOW ENERGY;
SEMICONDUCTOR JUNCTIONS;
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EID: 33747201119
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2006.02.198 Document Type: Article |
Times cited : (7)
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References (15)
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