Minimization of MuGFET source/drain resistance using wrap-around NiSi-HDD contacts

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1466-1471

  Dixit, A ^a,b   Anil, K G ^a   Collaert, N ^a   Zimmerman, P ^c   Jurczak, M ^a   De Meyer, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Intel Corporation Belgium   (Belgium)

Author keywords

Fin field effect transistors (FinFETs); Fully depleted; Heavily doped S D region (HDD); Nickel mono silicide; Series resistance; Silicon on insulator (SOI) MOSFET; Source drain (S D)

Indexed keywords

DOPING (ADDITIVES); ELECTRIC RESISTANCE; EPITAXIAL GROWTH; NICKEL COMPOUNDS; OPTIMIZATION; SILICA;

FIN FIELD-EFFECT TRANSISTORS (FINFETS); FULLY DEPLETED; HEAVILY DOPED S/D REGION (HDD); NICKEL-MONO-SILICIDE; SERIES RESISTANCE; SILICON-ON-INSULATOR (SOI) MOSFET; SOURCE/DRAIN (S/D);

FIELD EFFECT TRANSISTORS;

EID: 33747152760     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.05.025     Document Type: Article

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