Characterization and ellipsometric investigation of high-quality ZnO and ZnO(Ga2O3) thin alloys by reactive electron-beam co-evaporation technique

Microelectronics Journal

Volumn 37, Issue 10, 2006, Pages 1080-1085

  Al Asmar, R ^a,b,c   Atanas, J P ^b,c,d   Zaatar, Y ^b   Podlecki, J ^a   Foucaran, A ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b HOLY SPIRIT UNIVERSITY OF KASLIK USEK   (Lebanon)

^c LEBANESE UNIVERSITY   (Lebanon)

^d UNIVERSITY OF BALAMAND   (Lebanon)

Author keywords

e Beam co evaporation; Ellipsometric measurements; Photoluminescence; ZnO(Ga2O3)

Indexed keywords

ALLOYING ELEMENTS; ELECTRON BEAMS; ELLIPSOMETRY; EVAPORATION; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; THIN FILMS; X RAY DIFFRACTION;

E-BEAM CO-EVAPORATION; ELLIPSOMETRIC MEASUREMENTS; OXYGEN ENVIRONMENT; ZNO(GA2O3);

ZINC OXIDE;

EID: 33746943996     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.03.005     Document Type: Article

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