Enhanced photoluminescence from polycrystalline ZnO films resulting from oxygen processing

Thin Solid Films

Volumn 460, Issue 1-2, 2004, Pages 232-236

  Wang, Gang ^a   Zhang, G ^b,d   Ketterson, J B ^b,e   Gatt, R ^c  

^a INDIANA UNIVERSITY PURDUE UNIVERSITY FORT WAYNE   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

^c El Mul Technologies Ltd   (Israel)

^d TIANJIN UNIVERSITY   (China)

^e Northwestern University   (United States)

Author keywords

Oxygen partial pressure; Photoluminescence; ZnO films

Indexed keywords

ANNEALING; PARTIAL PRESSURE; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; ULTRAVIOLET RADIATION; ZINC OXIDE;

BAND GAPS; EXCITONIC GAIN; OXYGEN DEFECTS; OXYGEN PRESSURE;

THIN FILMS;

EID: 2942615164     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.01.089     Document Type: Article

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