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Volumn 217, Issue 1, 2000, Pages 131-137
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Low-temperature epitaxy of ZnO films on Si(001) and silica by reactive e-beam evaporation
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
ELECTRON BEAMS;
EPITAXIAL GROWTH;
EVAPORATION;
LOW TEMPERATURE EFFECTS;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
RAMAN SCATTERING;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON;
SILICA;
X RAY DIFFRACTION ANALYSIS;
LOW TEMPERATURE EPITAXY;
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY;
REACTIVE ELECTRON BEAM EVAPORATION;
ZINC OXIDE FILMS;
SEMICONDUCTING ZINC COMPOUNDS;
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EID: 0034229758
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(00)00397-3 Document Type: Article |
Times cited : (87)
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References (13)
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