Properties of InGaN deposited on glass at low temperature

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Beierlein, Tilman ^a   Strite, S ^a   Dommann, A ^b   Smith, D J ^c  

^a IBM RESEARCH ZURICH   (Switzerland)

^b Neu Technikum Buchs   (Switzerland)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DEPOSITION; ELECTRIC CONDUCTIVITY; FILM GROWTH; GLASS; LIGHT ABSORPTION; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY;

INDIUM TIN OXIDE (ITO); IONICITY; SHEET RESISTANCE; STATIC FREE COATINGS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 4043094831     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001551     Document Type: Article

References (12)

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