Annealing of GaN under high pressure of nitrogen

Journal of Physics Condensed Matter

Volumn 14, Issue 44 SPEC ISS., 2002, Pages 11097-11110

  Porowski, S ^a   Grzegory, I ^a   Kolesnikov, D ^a   Lojkowski, W ^a   Jager, V ^a   Jager, W ^a   Bogdanov, V ^a   Suski, T ^a   Krukowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; DISLOCATIONS (CRYSTALS); HIGH PRESSURE EFFECTS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; THERMODYNAMIC PROPERTIES;

DISLOCATION DENSITY; HIGH NITROGEN PRESSURE;

GALLIUM NITRIDE;

EID: 0037064795     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/44/433     Document Type: Article

References (22)

1. Amano H, Kito M, Hiramatsu K and Akasaki I 1986 Japan. J. Appl. Phys. 2, Lett. 28 L2112
2. Nakamura S, Mukai T, Senoh M and Iwasa N 1992 Japan. J. Appl. Phys. 2, Lett. 31 L139
3. Nakamura S, Senoh M and Mukai T 1993 Japan. J. Appl. Phys. 2, Lett. 32 L8
4. Nakamura S, Senoh M, Iwasa N and Nagahama S 1995 Japan. J. Appl. Phys. 2, Lett. 34 L797
5. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H and Sugimoto Y 1996 Japan. J. Appl. Phys. 2, Lett. 35 L74
6. Nakamura S 2000 Mater. Sci. Forum pt 2 338-342 1609
7. Liliental-Weber Z and Cherns D 2001 J. Appl. Phys. 89 7833
8. Grzegory I 2002 J. Phys.: Condens. Matter 14
9. Kirchner C, Schwegler V, Eberhard F, Kamp M, Ebeling K J, Prystawko P, Leszczynski M, Grzegory I and Porowski S 2000 Prog. Cryst. Growth Character. Mater. 41 57
10. Okamoto Y, Saito M and Oshiyama A 1996 Japan. J. Appl. Phys. 2, Lett. 35 L807
11. Suski T, Litwin-Staszewska E, Perlin P, Wisniewski P, Teisseyre H, Grzegory I, Bockowski M, Porowski S, Saarinen K and Nissila J 2002 J. Cryst. Growth 230 368
12. Litwin-Staszewska E, Suski T, Piotrzkowski R, Grzegory I, Bockowski M, Robert J L, Konczewicz S, Wasik D, Kaminska M, Cote D and Clerjaud B 2001 J. Appl. Phys. 89 7960
13. Suski T, Perlin P, Leszczynski M, Teisseyre H, Grzegory I, Jun J, Bockowski M, Porowski S, Pakula K, Wysmolek A and Baraowski J M 1996 Gallium nitride and related materials 1st Int. Symp. Mater. Res. Soc. (Pittsburgh, PA: Materials Research Society) pp 15-25
14. Ohuchi Y, Tadatomo K, Nakayama H, Kaneda N, Detchprohm T, Hiramatsu K and Sawaki N 1997 J. Cryst. Growth 170 325
15. Porowski S, Jun J, Krukowski S, Grzegory I, Leszczynski M, Suski T, Teisseyre H, Foxon C T and Korakakis D 1999 Physica B 265 295
16. Barun I 1994 Thermochemical Data of Pure Substances 3rd edn (Weinheim: VCH)
17. Karpinski J, Jun J and Porowski S 1985 J. Cryst. Growth 66 1
18. Van Vechten J A 1973 Phys. Rev. B 7 1479
19. Kaur I and Gust W 1988 Fundamentals of Grain and Interphase Boundary Diffusion (Stuttgart: Ziegler)
20. Stolwijk N A, Bosker G and Popping J 2001 Defect Diffusion Forum 194-199 687
21. Ambacher O, Freudberg F, Dimitrov R, Angerer H and Stutzman M 1998 Japan. J. Appl. Phys. 37 2416
22. Romano T L, McCluskey M D, Vande Walle C G, Northrup J E, Bour D P, Kneissi M, Suski T and Jun J 1999 Appl. Phys. Lett. 75 3950