Doping of GaN by ion implantation

Materials Research Society Symposium-Proceedings

Volumn 650, Issue , 2001, Pages

  Alves, Eduardo J ^a,b   Liu, C ^a,b   Da Silva, Maria F ^a,b   Soares, José C ^a,b   Correia, Rosário ^c   Monteiro, Teresa ^c  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY GAP; ION IMPLANTATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; X RAY ANALYSIS; CALCIUM; CRYSTAL LATTICES; ERBIUM; GALLIUM NITRIDE; LUMINESCENCE; STRUCTURE (COMPOSITION);

BAND GAP; CHANNELING TECHNIQUE; X RAY EMISSION; ION IMPLANTED GALLIUM NITRIDE; LIQUID HELIUM TEMPERATURE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035160789     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)