Study of calcium implanted GaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 625-629

  Alves, E ^a,b   Liu, C ^a,b   Lopes, E B ^a   Da Silva, M F ^a,b   Soares, J C ^a,b   Boemare, C ^c   Soares, M J ^c   Monteiro, T ^c  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

GaN; Lattice location; RBS channeling

Indexed keywords

ANNEALING; CALCIUM; CRYSTAL LATTICES; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; X RAY ANALYSIS;

LATTICE LOCATION;

SINGLE CRYSTALS;

EID: 0036568979     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01187-9     Document Type: Conference Paper

References (10)