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Volumn 15, Issue 9, 2006, Pages 1378-1382
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Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy
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Author keywords
Amorphous carbon nitride; Kelvin probe force microscopy; Work function
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Indexed keywords
AMORPHOUS MATERIALS;
CARBON NITRIDE;
HETEROJUNCTIONS;
INTERFACES (MATERIALS);
AMORPHOUS-CARBON NITRIDE;
DEPTH PROFILES;
KELVIN PROBE FORCE MICROSCOPY;
SURFACE TRAPPING;
WORK FUNCTION;
FERMI LEVEL;
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EID: 33746581938
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/j.diamond.2005.10.001 Document Type: Article |
Times cited : (1)
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References (20)
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