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Volumn 15, Issue 9, 2006, Pages 1378-1382

Depth profiles of the Fermi level at an amorphous-carbon nitride/SiO2/n-type-Si heterojunction interface obtained by Kelvin probe force microscopy

Author keywords

Amorphous carbon nitride; Kelvin probe force microscopy; Work function

Indexed keywords

AMORPHOUS MATERIALS; CARBON NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS);

EID: 33746581938     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.10.001     Document Type: Article
Times cited : (1)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.