Interface formation between hydrogen terminated Si(111) and amorphous hydrogenated carbon (a-C:H)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 2, 1997, Pages 408-414

  Schafer J ^a   Ristein, J ^a   Miyazaki, S ^a,b   Ley, L ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031490170     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580499     Document Type: Article

References (30)

1. Th. Mandel, M. Frischholz, R. Helbig, and A. Hammerschmidt, Appl. Phys. Lett. 64, 3637 (1994).
2. G. A. J. Amaratunga and S. R. P. Silva, J. Non-Cryst. Solids 189-200, 611 (1996).
3. See, e.g., J. Robertson, in Properties and Characterization of Amorphous Carbon Films, edited by J. J. Pouch, Mater. Sci. For. 52+53 (Transtec, Zürich, 1990), p. 126.
4. P. Koidl, Ch. Wild, B. Dischler, J. Wagner, and M. Ramsteiner, in Ref. 3, p. 41.
5. D. R. McKenzie, R. C. McPhedran, and N. Savvides, Philos. Mag. B 48, 341 (1984).
6. J. Ristein, J. Schäfer, and L. Ley, Diam. Relat. Mater. 4, 508 (1995).
7. M. Frischholz, Th. Mandel, R. Helbig, G. Schmidt, and A. Hammerstein, Appl. Surf. Sci. 65/66, 784 (1993).
8. Th. Mandel, M. Frischholz, R. Helbig, S. Birkle, and A. Hammerschmidt, Appl. Surf. Sci. 65/66, 795 (1993).
9. A. Azim Khan, J. A. Wollam, and Y. Chung, J. Appl. Phys. 55, 4299 (1984).
10. V. J. Kapoor, M. J. Mirtich, and B. A. Banks, J. Vac. Sci. Technol. A 4, 1013 (1985).
11. J. Seth, M. I. Chaudhry, and S. V. Babu, J. Vac. Sci. Technol. A 10, 3125 (1992).
12. S. B. Iyer, K. S. Harshavardan, and V. Kumar, Diam. Relat Mater. 2, 1459 (1993).
13. P. Sandner, U. Kaiser, M. Altebockwinkel, L. Wiedmann, A. Benninghoven, R. E. Sah, and P. Koidl, J. Vac. Sci. Technol. A 5, 1470 (1987).
14. M. Kawasaki, G. J. Vandentop, M. Salmeron, and G. A. Somorjai, Surf. Sci. 227. 261 (1990).
15. D. Ugolini, J. Eitle, P. Oelhafen, and M. Wittmer, Appl. Phys. A 48, 549 (1989).
16. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
17. S. Miyazaki, J. Schäfer, J. Ristein, and L. Ley, Appl. Phys. Lett. 66, 1247 (1996).
18. R.-C. Fang and L. Ley, Phys. Rev. B 40, 3818 (1989).
19. J. Schäfer, J. Ristein, and L. Ley, J. Non-Cryst. Solids 164-166, 1123 (1993).
20. M. P. Seah and W. A. Denck, Surf. Interface Anal. 1, 2 (1979).
21. P. Sander, M. Altebockwinkel, W. Storm, L. Wiedmann, and A. Benninghoven, J. Vac. Sci. Technol. B 7. 517 (1989).
22. J. Hauser, J. Non-Cryst. Solids 23, 21 (1977).
23. J. I. Pankove, in Hydrogen in Semiconductors, Semiconductors and Semimetals, Vol. 34, edited by J. I. Pankove and N. M. Johnson (Academic, New York, 1991), p. 91.
24. J. Ristein, J. Appl. Phys. 78, 6083 (1995).
25. M. W. Horn, J. M. Heddleson, and S. J. Fonash, Appl. Phys. Lett. 51, 490 (1987).
26. J. Schäfer, J. Ristein, and L. Ley, Diam. Relat. Mater. 3, 861 (1994).
27. N. M. Johnson, F. A. Ponce, R. A. Street, and R. J. Nemanich, Phys. Rev. B 35, 4166 (1987).
28. A. Asano, Appl. Phys. Lett. 56, 533 (1990).
29. H. Shirai, J. Hanua, and I. Shimizu, Jpn. J. Appl. Phys. 30, L679 (1991).
30. T. Mandel, Ph. D. thesis, University of Erlangen, 1994.