On the simulation of low-frequency noise upconversion in InGaP/GaAs HBTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 7, 2006, Pages 2954-2961

  Rudolph, Matthias ^a,b   Lenk, Friedrich ^a,b   Llopis, Olivier ^c,d   Heinrich, Wolfgang ^a,b  

^a IEEE   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c LAAS CNRS   (France)

^d UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

Amplifier noise; Burst noise; Equivalent circuit; Heterojunction bipolar transistor (HBT); Noise; Oscillator noise; Phase noise; Semiconductor device modeling; Semiconductor device noise; Shot noise

Indexed keywords

AMPLIFIER NOISE; BURST NOISE; EQUIVALENT CIRCUIT; OSCILLATOR NOISE; PHASE NOISE; SEMICONDUCTOR DEVICE MODELING; SEMICONDUCTOR DEVICE NOISE;

ACOUSTIC NOISE; COMPUTER SIMULATION; NATURAL FREQUENCIES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SHOT NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33746447951     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.877055     Document Type: Article

References (21)

1. D. Leeson, "A simple model of feedback oscillator noise spectrum," Proc. IEEE, vol. 54, no. 2, pp. 329-330, Feb. 1966.
2. S. Pérez, T. Gonzalez, S. L. Delage, and J. Obregon, "Microscopic analysis of generation-recombination noise in semiconductors under DC and time-varying electric fields," J. Appl. Phys., vol. 88, no. 2, pp. 800-807, Jul. 15, 2000.
3. F. Bonani, S. D. Guerrieri, and G. Ghione, "Noise source modeling for cyclostationary noise analysis in large-signal device operation," IEEE Trans. Electron Devices, vol. 49, no. 9, pp. 1640-1647, Sep. 2002.
4. J. E. Sanchez, G. Bosman, and M. E. Law, "Two-dimensional semi-conductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models," IEEE Trans. Electron Devices, vol. 50, no. 5, pp. 1353-1362, May 2003.
5. F. Bonani, S. D. Guerrieri, and G. Ghione, "Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection - Part I: Model derivation," IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 467-176, Mar. 2004.
6. F. Bonani, S. D. Guerrieri, and G. Ghione, "Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection - Part II: Discussion," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 477-485, Feb. 2004.
7. M. Margraf and G. Böck, "Analysis and modeling of low-frequency noise in resistive FET mixers," IEEE Trans. Microw. Theory Tech., vol. 52, no. 7, pp. 1709-1718, Jul. 2004.
8. J.-C. Nallatamby, M. Prigent, M. Camiade, A. Sion, C. Gourdon, and J. J. Obregon, "An advanced low-frequency noise model of GalnP/GaAs HBT for accurate prediction of phase noise in oscillators," IEEE Trans. Microw. Theory Tech., vol. 53, no. 5, pp. 1601-1612, May 2005.
9. C. M. Van Vliet, "Macroscopic and microscopic methods for noise in devices," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 1902-1915, Nov. 1994.
10. F. Bonani and G. Ghione, Noise in Semiconductor Devices, Modeling and Simulation. Berlin, Germany: Springer-Verlag, 2001, pp. 13-23.
11. J. Hilsenbeck, F. Lenk, W. Heinrich, and J. Würfl, "Low phase noise MMIC VCOs for A'o-band applications with improved GaInP/GaAs-HBT technology," in IEEE GaAs IC Symp. Dig., 2003, pp. 223-226.
12. G. Cibiel, L. Escotte, and O. Llopis, "A study of the correlation between high-frequency noise and phase noise in low-noise silicon-based transistors," IEEE Trans. Microw. Theory Tech., vol. 52, no. 1, pp. 183-190, Jan. 2004.
13. F. X. Kaertner, "Determination of the correlation spectrum of oscillators with low noise," IEEE Trans. Microw. Theory Tech., vol. 37, no. 1, pp. 90-101, Jan. 1989.
14. A. Hajimiri and T. H. Lee, "A general theory of phase noise in electrical oscillators," IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 179-194, Feb. 1998.
15. A. Suárez, S. Sancho, S. Ver Hoeye, and J. Portilla, "Analytical comparison between time- and frequency-domain techniques for phase-noise analysis," IEEE Trans. Microw. Theory Tech., vol. 50, no. 10, pp. 2353-2361, Oct. 2002.
16. M. Rudolph, R. Doerner, K. Beilenhoff, and P. Heymann, "Unified model for collector charge in heterojunction bipolar transistors," IEEE Trans. Microw. Theory Tech., vol. 50, no. 7, pp. 1747-1751, Jul. 2002.
17. M. Rudolph and R. Doerner, "Consistent modeling of capacitances and transit times of GaAs-based HBTs," IEEE Trans. Election Dev., vol. 52, no. 9, pp. 1969-1975, Sep. 2005.
18. M. Rudolph, R. Doerner, L. Klapproth, and P. Heymann, "An HBT noise model valid up to transit frequency," IEEE Electron Device Lett., vol. 20, no. 1, pp. 24-26, Jan. 1999.
19. P. Heymann, M. Rudolph, R. Doerner, and F. Lenk, "Modeling of low-frequency noise in GaInP/GaAs hetero-bipolar transistors," in IEEE MTT-S Int. Microw. Symp. Dig., 2001, pp. 1967-1970.
20. "User defined models" Agilent Technol., Palo Alto, CA, Dec. 2003. [Online]. Available: http://eesof.tm.agilent.com/ docs/adsdoc2003C/pdf/ modbuild.pdf
21. "Using Verilog-A in advanced design system" Agilent Technol., Palo Alto, CA, Dec. 2003. [Online]. Available: http://eesof.tm.agilent.com/docs/ adsdoc2003C/pdf/veriloga.pdf