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Volumn 51, Issue 3, 2004, Pages 467-476

Compact Conversion and Cyclostationary Noise Modeling of pn-Junction Diodes in Low-Injection - Part I: Model Derivation

Author keywords

Frequency conversion; Pn junctions; Semiconductor device modeling; Semiconductor device noise

Indexed keywords

APPROXIMATION THEORY; BIPOLAR TRANSISTORS; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC RESISTANCE; FREQUENCY CONVERTERS; GREEN'S FUNCTION; SEMICONDUCTOR DOPING; SHORT CIRCUIT CURRENTS; SPURIOUS SIGNAL NOISE; TIME VARYING SYSTEMS;

EID: 1642402117     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.821570     Document Type: Article
Times cited : (11)

References (15)
  • 2
    • 0015419350 scopus 로고
    • General transport theory of noise in pn-junction-like devices - I: Three-dimensional green's function formulation
    • K. M. van Vliet, "General transport theory of noise in pn-junction-like devices - I: Three-dimensional green's function formulation," Solid State Electron, vol. 15, pp. 1033-1053, 1972.
    • (1972) Solid State Electron , vol.15 , pp. 1033-1053
    • Van Vliet, K.M.1
  • 4
    • 84946325945 scopus 로고
    • Analysis of thermal and shot noise in pumped resistive diodes
    • C. Dragone, "Analysis of thermal and shot noise in pumped resistive diodes," Bell Syst. Tech. J., vol. 47, pp. 1883-1902, 1968.
    • (1968) Bell Syst. Tech. J. , vol.47 , pp. 1883-1902
    • Dragone, C.1
  • 6
    • 0036712371 scopus 로고    scopus 로고
    • Noise source modeling for cyclostationary noise analysis in large-signal device operation
    • Sept.
    • F. Bonani, S. Donati Guerrieri, and G. Ghione, "Noise source modeling for cyclostationary noise analysis in large-signal device operation," IEEE Trans. Electron Devices, vol. 49, pp. 1640-1647, Sept. 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , pp. 1640-1647
    • Bonani, F.1    Donati Guerrieri, S.2    Ghione, G.3
  • 7
    • 0038575190 scopus 로고    scopus 로고
    • Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications
    • Mar.
    • _, "Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications," IEEE Trans. Electron Devices, vol. 50, pp. 633-644, Mar. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , pp. 633-644
  • 8
    • 0035340024 scopus 로고    scopus 로고
    • A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation
    • May
    • F. Bonani, S. Donati Guerrieri, G. Ghione, and M. Pirola, "A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation," IEEE Trans. Electron Devices, vol. 48, pp. 966-977, May 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 966-977
    • Bonani, F.1    Donati Guerrieri, S.2    Ghione, G.3    Pirola, M.4
  • 9
    • 0042490772 scopus 로고    scopus 로고
    • Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models
    • May
    • J. E. Sanchez, G. Bosman, and M. E. Law, "Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models," IEEE Trans. Electron Devices, vol. 50, pp. 1353-1362, May 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , pp. 1353-1362
    • Sanchez, J.E.1    Bosman, G.2    Law, M.E.3
  • 10
    • 0032186662 scopus 로고    scopus 로고
    • Noise modeling in MESFET and HEMT mixers using a uniform noisy line model
    • Oct.
    • F. Danneville, G. Dambrine, and A. Cappy, "Noise modeling in MESFET and HEMT mixers using a uniform noisy line model," IEEE Trans. Electron Devices, vol. 45, pp. 2207-2212, Oct. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 2207-2212
    • Danneville, F.1    Dambrine, G.2    Cappy, A.3
  • 11
    • 0036931280 scopus 로고    scopus 로고
    • A new, closed-form compact model for the cyclostationary noise and LS conversion behavior of RF junction diodes
    • San Francisco, CA, Dec. 8-11
    • F. Bonani, S. Donati Guerrieri, and G. Ghione, "A new, closed-form compact model for the cyclostationary noise and LS conversion behavior of RF junction diodes," in IEDM Tech. Dig., San Francisco, CA, Dec. 8-11, 2002, pp. 137-140.
    • (2002) IEDM Tech. Dig. , pp. 137-140
    • Bonani, F.1    Donati Guerrieri, S.2    Ghione, G.3
  • 13
    • 1642294877 scopus 로고    scopus 로고
    • Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection - Part II: Discussion
    • Mar.
    • F. Bonani, S. Donati Guerrieri, and G. Ghione, "Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection - Part II: Discussion," IEEE Trans. Electron Devices, vol. 51, pp. 477-485, Mar. 2004.
    • (2004) IEEE Trans. Electron Devices , vol.51 , pp. 477-485
    • Bonani, F.1    Donati Guerrieri, S.2    Ghione, G.3
  • 15
    • 0029310214 scopus 로고
    • A full dynamic model for pn-junction diode switching transients
    • May
    • R. B. Darling, "A full dynamic model for pn-junction diode switching transients," IEEE Trans. Electron Devices, vol. 42, pp. 969-976, May 1995.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 969-976
    • Darling, R.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.