Consistent modeling of capacitances and transit times of GaAs-based HBTs

IEEE Transactions on Electron Devices

Volumn 52, Issue 9, 2005, Pages 1969-1975

  Rudolph, Matthias ^a   Doerner, Ralf ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Equivalent circuit; Heterojunction bipolar transistor (HBT); Semiconductor device modeling

Indexed keywords

CAPACITANCE; DELAY CIRCUITS; EQUIVALENT CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SIGNAL PROCESSING; TRANSIT TIME DEVICES;

BIAS DEPENDENT CHARGE SOURCES; LARGE-SIGNAL EQUIVALENT CIRCUIT; SMALL-SIGNAL CIRCUIT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 26244447116     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.854284     Document Type: Article

References (22)

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