IIIB- nitride semiconductors for high temperature electronic applications

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 529-534

  Bai, X ^a   Hill, D M ^a   Kordesch, M E ^a  

^a OHIO UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; HALL EFFECT; HIGH TEMPERATURE APPLICATIONS; INFRARED SPECTROSCOPY; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; VAPORS; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE; ATOMIC NITROGEN SOURCE; YTTRIUM NITRIDE;

THIN FILMS;

EID: 0033330119     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-529     Document Type: Conference Paper

References (7)

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