SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 490-494

ScN/GaN heterojunctions: Fabrication and characterization

(5) Perjeru, F a Bai, X a Ortiz Libreros, M I a Higgins, R a Kordesch, M E a

a OHIO UNIVERSITY (United States)

Author keywords

GaN; n n heterojunction; ScN

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANDIUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

SCANDIUM NITRIDES;

HETEROJUNCTIONS;

EID: 4243596030 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00079-4 Document Type: Article

Times cited : (34)

References (14)

1
- 0033330119
- 199'
- Bai X., Hill D.M., Kordesch M.E. Mater. Res. Soc. Symp. Proc. 572:199';529.
- Mater. Res. Soc. Symp. Proc. , vol.572 , pp. 529
- Bai, X.¹ Hill, D.M.² Kordesch, M.E.³

2
- 0032349151
- Gall D., Petrov I., Madsen L.D., Sundgren J.-E., Greene J.E. J. Vac. Sci. Technol. A. 16(4):1998;2411-2417.
- (1998) J. Vac. Sci. Technol. a , vol.16 , Issue.4 , pp. 2411-2417
- Gall, D.¹ Petrov, I.² Madsen, L.D.³ Sundgren, J.-E.⁴ Greene, J.E.⁵

3
- 0000108458
- Gall D., Petrov I., Desjardins P., Greene J.E. J. Appl. Phys. 86(10):1999;5524-5529.
- (1999) J. Appl. Phys. , vol.86 , Issue.10 , pp. 5524-5529
- Gall, D.¹ Petrov, I.² Desjardins, P.³ Greene, J.E.⁴

4
- 0034668517
- Lambrecht W.R.L. Phys. Rev. B. 60(20):2000;13538-13545.
- (2000) Phys. Rev. B , vol.60 , Issue.20 , pp. 13538-13545
- Lambrecht, W.R.L.¹

5
- 0001745861
- Travaglini G., Marbelli F., Monnier R., Kaldis E., Wachter P. Phys. Rev. B. 34(6):1986;3876-3882.
- (1986) Phys. Rev. B , vol.34 , Issue.6 , pp. 3876-3882
- Travaglini, G.¹ Marbelli, F.² Monnier, R.³ Kaldis, E.⁴ Wachter, P.⁵

6
- 0004187786
- Ph.D. Dissertation, Physics Department, Ohio University, Athens
- X. Bai, Growth and Characterization of IIIB-Nitride Semiconductors and Devices, Ph.D. Dissertation, Physics Department, Ohio University, Athens, 2000.
- (2000) Growth and Characterization of IIIB-Nitride Semiconductors and Devices
- Bai, X.¹

7
- 4243577184
- submitted for publication.
- M.I. Ortiz, X. Bai, F. Perjeru, M.E. Kordesch, Appl. Surf. Sci., submitted for publication.
- Appl. Surf. Sci.
- Ortiz, M.I.¹ Bai, X.² Perjeru, F.³ Kordesch, M.E.⁴

8
- 0033419974
- Chen Y., Gulino D.A., Higgins R. J. Vac. Sci. Technol. A. 17(5):1999;3029-3032.
- (1999) J. Vac. Sci. Technol. a , vol.17 , Issue.5 , pp. 3029-3032
- Chen, Y.¹ Gulino, D.A.² Higgins, R.³

9
- 0003818122
- Academic Press, New York
- A.G. Milnes, D.L. Feucht, Heterojunctions and Metal Semiconductor Junctions, Academic Press, New York, 1972.
- (1972) Heterojunctions and Metal Semiconductor Junctions
- Milnes, A.G.¹ Feucht, D.L.²

10
- 22644448597
- Hudai M.K., Krupanidhi S.B. J. Vac. Sci. Technol. B. 17(3):1999;1003-1010.
- (1999) J. Vac. Sci. Technol. B , vol.17 , Issue.3 , pp. 1003-1010
- Hudai, M.K.¹ Krupanidhi, S.B.²

11
- 36549095946
- Chand N., Ren F., Macrander A.T., Van der Ziel J.P., Sergent A.M., Hull R., Chu S.N.G., Chen Y.K., Lang D.V. J. Appl. Phys. 67:1990;2343.
- (1990) J. Appl. Phys. , vol.67 , pp. 2343
- Chand, N.¹ Ren, F.² MacRander, A.T.³ Van Der Ziel, J.P.⁴ Sergent, A.M.⁵ Hull, R.⁶ Chu, S.N.G.⁷ Chen, Y.K.⁸ Lang, D.V.⁹

12
- 0004071496
- Wiley, New York
- D.K. Schroder, Semiconductor Material Characterization, Wiley, New York, 1990.
- (1990) Semiconductor Material Characterization
- Schroder, D.K.¹

13
- 0343890196
- Nemirovsky Y., Gordon G., Goren D. J. Appl. Phys. 84(2):1998;1113-1120.
- (1998) J. Appl. Phys. , vol.84 , Issue.2 , pp. 1113-1120
- Nemirovsky, Y.¹ Gordon, G.² Goren, D.³

14
- 0343890198
- in: F. Capasso, G. Margaritondo (Eds.), North-Holland, Oxford, (Chapter 8).
- S.M. Forest, in: F. Capasso, G. Margaritondo (Eds.), Heterojunction Band Discontinuities, North-Holland, Oxford, 1987 (Chapter 8).
- (1987) Heterojunction Band Discontinuities
- Forest, S.M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.