Multi-bit storage through Si nanocrystals embedded in SiO2

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 411-414

  Lombardo, S ^a   Corso, D ^a   Crupi, I ^a   Gerardi, C ^b   Ammendola, G ^b   Melanotte, M ^b   De Salvo, B ^c   Perniola, L ^c  

^a CNR IMM   (Italy)

^b STMICROELECTRONICS   (Italy)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; DATA STORAGE EQUIPMENT; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SILICA; THERMAL EFFECTS; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

LATERAL CHARGE CONFINEMENT; NANOCRYSTAL MEMORY CELLS;

SILICON;

EID: 1642618674     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.023     Document Type: Conference Paper

References (7)

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