SCOPUS 정보 검색 플랫폼

Volumn 38, Issue 5, 2002, Pages 249-250

Defect dependent memory switching in amorphous silicon alloys

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC POTENTIAL; ION BOMBARDMENT; SILICON ALLOYS; SWITCHING THEORY;

MEMORY SWITCHING;

NONVOLATILE STORAGE;

EID: 0037186107 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20020160 Document Type: Article

Times cited : (3)

References (9)

1
- 0012265545
- Electronic switching in amorphous-semiconductor thin films
- Kanicki, J. (ed.): Artech House: Chap. 14
- (1992) Amorphous and microcrystalline semiconductor devices , vol.2
- Hajto, J.¹ Owen, A.E.² Snell, A.J.³ Le Comber, P.G.⁴ Rose, M.J.⁵

2
- 0033350465
- Memory switching in amorphous silicon-rich silicon carbide
- (1999) Electron. Lett. , vol.35 , pp. 1976-1977
- Shannon, J.M.¹ Lau, S.P.²

3
- 0001577352
- The role of the a-Si:H layer in metal/a-Si:H/metal memory structures
- (1992) Mater. Res. Soc. Symp. , vol.258 , pp. 1169-1173
- Osborne, I.S.¹ Hajto, J.² Rose, M.J.³ Snell, A.J.⁴ Le Comber, P.G.⁵ Owen, A.E.⁶

4
- 0004123419
- Cambridge University Press, Chap. 5
- (1991) Hydrogenated amorphous silicon
- Street, R.A.¹

6
- 0031620445
- Programmable devices based on current induced conductivity in amorphous silicon alloys
- (1998) Solid-State Electron. , vol.42 , pp. 91-99
- Shannon, J.M.¹ Lau, S.P.² Annis, A.D.³ Sealy, B.J.⁴

7
- 0006342090
- Generation and annealing kinetics of current induced metastable defects in amorphous silicon alloys
- (2000) J. Non-Crystal. Solids , vol.269 , pp. 432-436
- Lau, S.P.¹ Shannon, J.M.²

8
- 0032068750
- + a-Si:H/V thin film devices
- (1998) J. Non-Crystal. Solids , vol.227-230 , pp. 1187-1191
- Hu, J.¹ Snell, A.J.² Hajto, J.³ Owen, A.E.⁴

9
- 0000230470
- Electronic effects of ion damage in hydrogenated amorphous silicon alloys
- (1997) J. Appl. Phys. , vol.82 , pp. 4800-4804
- Van Swaaij, R.A.C.M.M.¹ Annis, A.D.² Sealy, B.J.³ Shannon, J.M.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.