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Volumn 14, Issue 3-7, 2005, Pages 1138-1141

Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes

Author keywords

Schottky diode; Silicon carbide; Silicon dioxide; Silicon nitride

Indexed keywords

CAPACITORS; ELECTRON TRAPS; ELLIPSOMETRY; OXIDATION; PASSIVATION; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; SILICA; SILICON NITRIDE;

EID: 18444362481     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.12.020     Document Type: Conference Paper
Times cited : (8)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.