|
Volumn 14, Issue 3-7, 2005, Pages 1138-1141
|
Silicon dioxide and silicon nitride as a passivation and edge termination for 4H-SiC Schottky diodes
|
Author keywords
Schottky diode; Silicon carbide; Silicon dioxide; Silicon nitride
|
Indexed keywords
CAPACITORS;
ELECTRON TRAPS;
ELLIPSOMETRY;
OXIDATION;
PASSIVATION;
REFRACTIVE INDEX;
SEMICONDUCTOR MATERIALS;
SILICA;
SILICON NITRIDE;
BAND EDGES;
BAND GAPS;
EDGE TERMINATION;
VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;
SCHOTTKY BARRIER DIODES;
|
EID: 18444362481
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/j.diamond.2004.12.020 Document Type: Conference Paper |
Times cited : (8)
|
References (11)
|