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Physica Status Solidi (B) Basic Research

Volumn 232, Issue 2, 2002, Pages 314-322

Boron site distribution in doped GaAs

(3) Patzold O a Gartner G a Irmer, G a

a TU BERGAKADEMIE FREIBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; FOURIER SERIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM; GALLIUM ARSENIDE; GERMANIUM; INFRARED DEVICES; LIGHT ABSORPTION; SEMICONDUCTING GALLIUM; SILICON;

AMPHOTERIC DOPANTS; BORON DEFECTS; DOPED CRYSTALS; GA-RICH CONDITIONS; LOCAL VIBRATIONAL MODE; NEAR INFRARED RAMAN SPECTROSCOPY; RADIATIVE RECOMBINATION; SITE DISTRIBUTION;

III-V SEMICONDUCTORS;

EID: 0036679989 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/1521-3951(200208)232:2<314::aid-pssb314>3.0.co;2-%23 Document Type: Article

Times cited : (10)

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