Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry

Materials Science and Engineering: A

Volumn 400-401, Issue 1-2 SUPPL., 2005, Pages 170-174

  Rudolph, P ^a   Frank Rotsch, Ch ^a   Juda, U ^a   Kiessling, F M ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Dislocation cells; Gallium arsenide; Melt growth; Stoichiometry; Stress computing

Indexed keywords

CELLS; COMPUTER SIMULATION; CORRELATION METHODS; CRYSTALS; ELASTIC MODULI; GALLIUM COMPOUNDS; POINT DEFECTS; STOICHIOMETRY; STRESS CONCENTRATION;

DISLOCATION CELLS; DISLOCATION DENSITY; GAAS CRYSTALS; SHEAR STRESS DISTRIBUTION;

DISLOCATIONS (CRYSTALS);

DISLOCATION (METALLURGY);

EID: 21744449756     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2004.12.054     Document Type: Article

References (30)

1. J.B. Mullin J. Cryst. Growth 264 2004 578
2. R. Kremer St. Teichert Compd. Semicond. 9 4 2003 35
3. P. Rudolph M. Jurisch in: H. Scheel T. Fukuda (Eds.) Crystal Growth Technology 2003 Wiley & Sons 294
4. P. Rudolph Ch. Frank-Rotsch U. Juda M. Naumann M. Neubert J. Cryst. Growth 265 2004 331
5. L.P. Kubin in: R.W. Cahn P. Haasen E.J. Kramer (Eds.) Materials Science and Technology vol. 6 1993 VCH Weinheim 137
6. M. Jimenez-Melendo A. Djemel J.P. Riviere J. Castaing in: H.J. von Bardeleben (Eds.) Defects in Semiconductors, Mater. Sci. Forum vol. 10-12 1986 791
7. G. Grange C. Jourdan A.L. Coulet J. Gastaldi J. Cryst. Growth 72 1985 748
8. D. Holt J. Appl. Phys. 41 1970 3197
9. F. Louchet Solid State Phenom. 35-36 1994 57
10. D. Klimm B. Tippelt P. Paufler P. Haasen Phys. Stat. Sol. (a) 138 1993 517
11. B. Tippelt D. Klimm P. Paufler Philos. Mag. A 69 1994 741
12. B. Geibel, Thesis, University Erlangen-Nürnberg, 1996.
13. M. Neubert P. Rudolph Prog. Cryst. Growth Charact. Mater. 43 2001 119
14. F.-M. Kiessling P. Rudolph M. Neubert U. Juda M. Naumann W. Ulrici J. Cryst. Growth 269 2004 218
15. J. Donecker S. Rautenstrauch S. Bergmann Inst. Phys. Conf. Ser. No. 160 1997 169
16. W. Schatt (Ed.), Einführung in die Werkstoffwissenschaft Dt. Vlg. Grundstoffind., Leipzig, 1981, p. 239.
17. A.S. Jordan A.R. von Neida R. Caruso J. Cryst. Growth 70 1984 555
18. N. Miyazaki Y. Kuroda M. Sakaguchi J. Cryst. Growth 218 2000 221
19. C.T. Tsai A.N. Gulluoglu C.S. Hartley J. Appl. Phys. 73 1993 1650
20. M. Kurz A. Pusztai G. Müller J. Cryst. Growth 198/199 1999 101
21. Ch. Frank K. Jacob M. Neubert P. Rudolph J. Fainberg G. Müller J. Cryst. Growth 213 2000 10
22. M. Naumann P. Rudolph M. Neubert J. Donecker J. Cryst. Growth 231 2001 22
23. T. Tuomi L. Knuuttila J. Riikonen P.J. McNally W.-M. Chen J. Kanatharana M. Neubert P. Rudolph J. Cryst. Growth 237 2002 350
24. L.P. Kubin B. Devincre M. Tang J. Comput. Aided Mater. Des. 5 1998 31
25. G. Langford M. Cohen Trans. ASM 62 1969 623
26. M. Zaiser M.C. Miguel I. Groma Phys. Rev. B64 2002 224102
27. F.R.N. Nabarro Z.S. Basinski D.B. Holt Adv. Phys. 13 1964 193
28. D. Kuhlmann-Wilsdorf in: J.P. Hirth J. Weertman (Eds.) Work Hardening (1968) 1968 Gordon and Breach New York 97
29. (see also: M. Zaieree also: M. Zaiser in: G Müller, J.-. Metois, P. Rudolph (Eds.), Crystal Growth-from Fundamentals to Technology, Elsevier, Amsterdam, 2004, p. 215)
30. H. Siethoff R. Behrensmeier K. Ahlborn J. Völkl Philos. Mag. 61 1990 233