Dependence of RF performance of GaN/AlGaN HEMTS upon AlGaN barrier layer variation

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 3, 2004, Pages 750-755

  Faraclas, Elias ^a   Webster, Richard T ^b   Brandes, George ^c   Anwar, A F M ^a  

^a University of Connecticut   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTER SIMULATION; ELECTRONS; GAIN CONTROL; OSCILLATIONS; PIEZOELECTRIC DEVICES; POISSON EQUATION; POLARIZATION;

ELECTRON CONCENTRATION; MOLE FRACTION; PIEZOELECTRIC POLARIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 24144461243     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156404002788     Document Type: Conference Paper

References (8)

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2. Y.-F. Wu, et al., "30-W/mm GaN HEMTs by Field Plate Optimization". IEEE Elec. Dev. Lett., 2004. 25(3): p. 117-119.
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8. J.P. Ibbetson, et al., "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors". Applied Physics Letters, 2000, 77(2): p. 250-252.