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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 B, 2006, Pages 5450-5455

Low-Ea chemical amplification resists for 193 nm lithography

(5) Ogata, Toshiyuki a Furuya, Sanae a Kasai, Kohei a Hada, Hideo a Shirai, Masamitsu b

a TOKYO OHKA KOGYO CO LTD (Japan)

b Osaka Prefecture University (Japan)

Author keywords

Activation energy; Chemical amplification positive tone resist; Deprotection reaction; Low Ea; Methyl acetal protecting group

Indexed keywords

ACTIVATION ENERGY; CATALYSTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LITHOGRAPHY; POLYMERS; REACTION KINETICS; SEMICONDUCTING FILMS;

CHEMICAL AMPLIFICATION POSITIVE-TONE RESIST; DEPROTECTION REACTION; LOW EA; METHYL ACETAL PROTECTING GROUPS;

PHOTORESISTORS;

EID: 33745657851 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.5450 Document Type: Review

Times cited : (3)

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