Design and characterization of alicyclic polymers with alkoxy-ethyl protecting groups for arf chemically amplified resists

Journal of Photopolymer Science and Technology

Volumn 9, Issue 3, 1996, Pages 447-456

  Iwasa, Shigeyuki ^a   Maeda, Katsumi ^a   Nakano, Kaichiro ^a   Ohfuji, Takeshi ^a   Hasegawa, Etsuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000921871     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.9.447     Document Type: Article

References (13)

1. K. Nakano, K. Maeda, S. Iwasa, J. Yano, Y. Ogura, and E. Hasegawa, Transparent Photoacid Generator (ALS) for ArF Excimer Laser Lithography and Chemically Amplified Resist, Proc. SPIE, 2195, 194 (1994).
2. K. Nakano, K. Maeda, S. Iwasa, T. Ohfuji, and E. Hasegawa, Positive Chemically Amplified Resist for ArF Excimer Laser lithography Composed a Novel Transparent Photoacid Generator and an Alicyclic Terpolymer, Proc. SPIE, 2438, 433 (1995).
3. K. Maeda, K. Nakano, T. Ohfuji and E. Hasegawa, Novel Alkaline-Soluble Alicyclic Polymer Poly(TCDMACOOH) for ArF Chemically Amplified Resists, Proc. SPIE, 2724, in press (1996).
4. S. Takechi, Y. Kaimoto, K Nozaki, and N. Abe, Alicyclic Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification, J. Photopolytn. Sei. TechnoL, 5, 439 (1992).
5. M. Takahashi, S. Takechi, Y. Kaimoto, I. Hanyu, N. Abe, and K Nozaki, Evaluation chemically amplified resist based on adamantyl methacrylate for 193 nm lithography, Proc. SPIE, 2438,422 (1995).
6. R. D. Allen, G. M. Wallraff, R. A. DiPietro, D. C. Hofer, and R. R. Kunz, 193 nm Single Layer Positive Resists Building Etch Resistance Into a High Resolution Imaging System, Proc. SPIE, 2438,474 (1995).
7. R. D. Alien, I. Y. Wan, G. M. Wallraff, R. A. DiPietro, D. C. Hofer, and R. R. Kunz, Resolution and Etch Resistance of Family of 193 nm Positive Resists, J. Photopolym. Sei. TechnoL, 8,623 (1995).
8. T. Sakamizu, H. Shiraishi, H. Yamaguchi, T. Ueno, and N. Hayashi, Acid-Catalyzed reaction of Tetrahydropyrany-Protected Polyvinylphenol in a Novolak-Resin-Based Positive Resist, Jpn. J. Appl. Phys., 31,428(1992).
9. T. Hattori, L. Schegel, A. Imai, N. Hayashi, and T. Ueno, Chemical Amplified Positive Deep UV Resist Using Partially Tetrahydropyrany-Protected Polyvinylphenol, Proc. SPIE, 1925,146 (1992).
10. H.Gokan, S.Esho, and Y.Onishi, Dry etch resistance of organic materials, J. Electronchem. Soc., 130,143(1983).
11. T. M. Chapman, E. A. Freedman, Synthesis, 591 (1971).
12. T. Ohfuji, K. Maeda, K. Nakano, and E. Hasegawa, Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography, Proc. SPIE, 2724, in press (1996).
13. J. A. Riddick, W. B. Hunger, and T. K. Sakano, Organic Solvents, John Willy & Sons(1986).