Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons

Semiconductors

Volumn 40, Issue 7, 2006, Pages 803-807

  Poklonski, N A ^a   Shpakovski, S V ^b   Gorbachuk, N I ^a   Lastovskii, S B ^c  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b INTEGRAL Research and Production Corporation   (Belarus)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745622407     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782606070128     Document Type: Article

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