Charge accumulation effects and negative capacitance in heterostructures based on silicon

Izvestiya Akademii Nauk. Ser. Fizicheskaya

Volumn 63, Issue 2, 1999, Pages 312-316

  Boltaev, A P ^a   Burbaev, T M ^a   Kurbatov, V A ^a   Rzaev, M M ^a   Penin, N A ^a   Sibeldin, N N ^a  

^a NONE

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Indexed keywords

EID: 33745590087     PISSN: 03676765     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Boltaev A.P.; Kopaev Yu.V, Kornyakov N.V. et al. // Proc. Int. Symp. "Nanostructures: Physics and Technology". St. Petersburg, 1996. P. 416.