Process latitude measurements and their implications for CD control in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5374, Issue PART 1, 2004, Pages 43-52

  Cobb, Jonathan ^a   Peters, Richard ^a   Postnikov, Sergei ^a   Hector, Scott D ^a   Lu, Bing ^b   Weisbrod, Eric ^b   Wasson, James ^b   Mangat, Pawitter ^b   O'Connell, Donna ^c  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

CD control; Defect printability; Engineering test stand; EUV lithography; Line end shortening; Process latitude

Indexed keywords

CD CONTROL; DEFECT PRINTABILITY; ENGINEERING TEST STAND; EUV LITHOGRAPHY; LINE-END SHORTENING; PROCESS LATITUDE;

ARRAYS; DATA REDUCTION; DEFECTS; MASKS; MULTILAYERS; PRODUCTION ENGINEERING; STATIC RANDOM ACCESS STORAGE; ULTRAVIOLET RADIATION;

LITHOGRAPHY;

EID: 3843068690     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537366     Document Type: Conference Paper

References (10)

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3. Christof Krautschik et al., "The impact of EUV mask phase response on the asymmetry of Bossung Curves as predicted by rigorous EUV mask simulations," in Proceedings of SPIE Vol. 4343 Emerging Lithographic Technologies V, edited by Elizabeth A. Dobisz, (SPIE Bellingham, WA, 2003), pp. 392-401.
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