Effect of rapid thermal annealing on oxide precipitation behavior in silicon crystal

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 46-54

  Akatsuka, M ^a   Okui, M ^a   Sueoka, K ^a  

^a Sumitomo Metal Industries Limited   (Japan)

Author keywords

Carbon dope; Interstitial; Nitrogen dope; Oxide precipitate; Rapid thermal annealing; Vacancy

Indexed keywords

DIFFUSION; POINT DEFECTS; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SILICON WAFERS;

THERMAL EQUILIBRIUM;

SINGLE CRYSTALS;

EID: 0036136709     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00950-8     Document Type: Article

References (7)

1. Properties of silicon