Analysis of side-wall structure of grown-in twin-type octahedral defects in Czochralski silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1667-1670

  Ueki, Takemi ^a   Itsumi, Manabu ^a   Takeda, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Czochralski Si; EELS; Grown in defect; Octahedral void; TEM

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRON ENERGY LOSS SPECTROSCOPY; LSI CIRCUITS; SILICA; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

OCTAHEDRAL VOIDS;

SILICON WAFERS;

EID: 0032047046     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1667     Document Type: Article

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