Charge generation during oxidation of thin Hf metal films on silicon

Thin Solid Films

Volumn 513, Issue 1-2, 2006, Pages 201-205

  Gougousi, Theodosia ^a   Terry, David B ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

Charge defects; Dielectrics; Hafmium oxide; Interfaces; Oxidation

Indexed keywords

CAPACITANCE; CONCENTRATION (PROCESS); ELECTRIC CHARGE; HAFNIUM; METAL ANALYSIS; OXIDATION; REDUCTION;

CHARGE DEFECTS; HAFMIUM OXIDE; INTERFACIAL LAYERS;

THIN FILMS;

EID: 33745228065     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.02.004     Document Type: Article

References (18)

1. S.I. Association, The International Technology Roadmap for Semiconductors, International SEMATECH Austin, TX, 1999.
2. Wilk G.D., Wallace R.M., and Anthony J.M. J. Appl. Phys. 89 (2001) 5243 (and references therein)
3. Maria J.-P., Wicaksana D., Kingon A.I., Busch B., Schulte H., Garfunkel E., and Gustafsson T. J. Appl. Phys. 90 (2001) 918
4. Copel M., Cartier E., and Ross F.M. Appl. Phys. Lett. 78 (2001) 1607
5. Deal B.E., Sklar M., Grove A.S., and Snow E.H. J. Electrochem. Soc. 114 (1967) 226
6. Chambers J.J., and Parsons G.N. J. Appl. Phys. 90 (2001) 918
7. Lee B.H., Kang L., Nieh R., Qi W.J., and Lee J.C. Appl. Phys. Lett. 76 (2000) 1926
8. Yang N., Henson K.W., Hauser J.R., and Wortman J.J. IEEE Trans. Electron Devices 46 (1999) 1464
9. Sze S.M. Physics of Semiconductor Devices (1981), Wiley, New York
10. Hoshino Y., Kido Y., Yamamoto K., Hayashi S., and Niwa M. Appl. Phys. Lett. 81 (2002) 2659
11. Kirsch P.D., Kang C.S., Lozano J., Lee J.C., and Ekerdt J.G. J. Appl. Phys. 91 (2002) 4353
12. Gavartin J.L., Fonseca L., Bersuker G., and Shluger A.L. Microelec. Eng. 80 (2005) 412
13. Rashkeev S.N., van Benthem K., Pantelides S.T., and Pennycook S.J. Microelec. Eng. 80 (2005) 416
14. Ferrari S., and Scarel G. J. Appl. Phys. 96 (2004) 144
15. Houssa M., Afanas'ev V.V., Stesmans A., and Heyns M.M. Appl. Phys. Lett. 77 (2000) 1885
16. Gougousi T., and Parsons G.N. J. Appl. Phys. 95 (2004) 1391
17. Opila R.L., Wilk G.D., Alam M.A., van Dover R.B., and Busch B.W. Appl. Phys. Lett. 81 (2002) 1788
18. Schroder D.K. Semiconductor Material and Device Characterization. Second edition (1998), Wiley Interscience, New York NY 338