Neural-network-based charge density quantum correction of nanoscale MOSFETs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 3, 2006, Pages 438-442

  Li, Zunchao ^a   Jiang, Yaolin ^a   Zhang, Ruizhi ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Charge density; Nanoscale MOSFET; Neural network; Quantum correction

Indexed keywords

DENSITY (SPECIFIC GRAVITY); NEURAL NETWORKS; SILICON; SPEED;

CHARGE DENSITY; CHARGE DISTRIBUTION; LEVENBERG-MARQUARDT BACK PROPAGATION NEURAL NETWORKS; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET); QUANTUM CORRECTION; QUANTUM EFFECT; SCHRODIEDINGER-POISSON APPROACH; TRAINING SPEED;

FIELD EFFECT TRANSISTORS;

EID: 33745176971     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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