Predictive model of a reduced surface field p-LDMOSFET using neural network

Solid-State Electronics

Volumn 48, Issue 12, 2004, Pages 2153-2157

  Kim, Byunghwhan ^a   Kim, Sungmo ^a   Lee, Dae Woo ^b   Roh, Tae Moon ^b   Kim, Jongdae ^b  

^a Sejong University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; MOSFET DEVICES; NEURAL NETWORKS; PARAMETER ESTIMATION;

DRAIN-SOURCE CURRENTS; PREDICTIVE MODELS; STRUCTURAL MACROMODELS;

SOLID STATE DEVICES;

EID: 4544248642     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.06.004     Document Type: Article

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