Accurate and efficient modeling of SOI MOSFET with technology independent neural networks

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 23, Issue 11, 2004, Pages 1580-1587

  Hatami, S ^a   Azizi, M Y ^a   Bahrami, H R ^a   Motavalizadeh, D ^a   Afzali Kusha, A ^a  

^a UNIVERSITY OF TEHRAN   (Iran)

Author keywords

Circuit simulation; Fully depleted (FD); I V characteristic; Neural network (NN) modeling; Partially depleted (PD); Silicon on insulator (SOI) modeling; Technology independent modeling; Unified modeling

Indexed keywords

COMPUTER SIMULATION; DIFFERENTIATION (CALCULUS); MATHEMATICAL MODELS; MOSFET DEVICES; MULTILAYERS; RADIAL BASIS FUNCTION NETWORKS; SILICON ON INSULATOR TECHNOLOGY;

CIRCUIT SIMULATION; FULLY DEPLETED (FD); I-V CHARACTERISTICS; NEURAL NETWORK (NN) MODELING; PARTIALLY DEPLETED (PD); SILICON-ON-INSULATOR (SOI) MODELING; TECHNOLOGY INDEPENDENT MODELING; UNIFIED MODELING;

NEURAL NETWORKS;

EID: 8344282776     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2004.836725     Document Type: Article

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