Deep level defects in high temperature annealed InP

Science in China, Series E: Technological Sciences

Volumn 47, Issue 3, 2004, Pages 320-326

  Dong, Zhiyuan ^a   Zhao, Youwen ^a   Zeng, Yiping ^a   Duan, Manlong ^a   Lin, Lanying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Annealing ambience; Defects; InP

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; IRON COMPOUNDS; PHOSPHORUS;

ANNEALING AMBIENCE; DEEP DEFECTS; HIGH TEMPERATURE ANNEALING; IRON PHOSPHIDE;

INDIUM PHOSPHIDE;

EID: 33745157641     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1360/03ye0283     Document Type: Review

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