Creation and suppression of point defects through a kick-out substitution process of Fe in InP

Applied Physics Letters

Volumn 80, Issue 16, 2002, Pages 2878-2879

  Zhao, Y W ^a   Dong, H W ^a   Chen, Y H ^a   Zhang, Y H ^a   Jiao, J H ^a   Zhao, J Q ^a   Lin, L Y ^a   Fung, S ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-SITE DEFECT; DIFFUSION PROCESS; FE DIFFUSION; HIGH TEMPERATURE; INP; SEMI-INSULATING;

DIFFUSION; POINT DEFECTS;

INDIUM;

EID: 79956016974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1473695     Document Type: Article

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