Deep centers in undoped semi-insulating InP

Journal of Electronic Materials

Volumn 27, Issue 10, 1998, Pages

  Fang, Z Q ^a   Look, D C ^a   Uchida, M ^a   Kainosho, K ^a   Oda, O ^a  

^a WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARACTERIZATION; CRYSTAL DEFECTS; IRON; PHOSPHORUS; SEMICONDUCTOR DOPING; SPECTROSCOPY;

DEEP CENTERS; SEMI INSULATING INDIUM PHOSPHIDE; THERMALLY STIMULATED CURRENT SPECTROSCOPY; WAFER ANNEALING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032183651     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0152-x     Document Type: Article

References (17)

1. 1. A. Seidl F. Mosel J. Friedrich U. Kretzer G. Muller 1993 Mater. Sci. & Engr. B 21 321 321 10.1016/0921-5107(93)90377-Y A. Seidl, F. Mosel, J. Friedrich, U. Kretzer and G. Muller, Mater. Sci. & Engr. B 21, 321 (1993).
2. 2. D.E. Holmes R.G. Wilson P.W. Yu 1981 Appl. Phys. 52 3396 3396 10.1063/1.329165 1:CAS:528:DyaL3MXkslWru78%3D D.E. Holmes, R.G. Wilson and P.W. Yu, Appl. Phys. 52, 3396 (1981).
3. 3. K. Kainosho, H. Shimakura, H. Yamamoto, T. Inoue and O. Oda, Proc. First Intl. Conf. InP and Related Materials, (Oklahoma, 1989), p. 312.
4. 4. K. Kainosho H. Shimakura H. Yamamoto O. Oda 1991 Appl. Phys. Lett. 59 932 932 10.1063/1.106305 1:CAS:528:DyaK3MXlsVOns78%3D K. Kainosho, H. Shimakura, H. Yamamoto and O. Oda, Appl. Phys. Lett. 59, 932 (1991).
5. 5. D.C. Look Z.-Q. Fang J.W. Hemsky P. Kengkan 1997 Phys. Rev. B 55 2214 2214 10.1103/PhysRevB.55.2214 1:CAS:528:DyaK2sXpvV2ksg%3D%3D D.C. Look, Z.-Q. Fang, J.W. Hemsky and P. Kengkan, Phys. Rev. B 55, 2214 (1997).
6. 6. S. Kuisma K. Saarinen P. Hautojarvi Z-Q. Fang D.C. Look 1997 J. Appl. Phys. 81 3512 3512 10.1063/1.364705 1:CAS:528:DyaK2sXivVahtLY%3D S. Kuisma, K. Saarinen, P. Hautojarvi, Z-Q. Fang and D.C. Look, J. Appl. Phys. 81, 3512 (1997).
7. 7. Z.-Q. Fang D.C. Look J.H. Zhao 1992 Appl. Phys. Lett. 61 589 589 10.1063/1.108474 1:CAS:528:DyaK38XlsVWhsb4%3D Z.-Q. Fang, D.C. Look and J.H. Zhao, Appl. Phys. Lett. 61, 589 (1992).
8. 8. R. Fornari B. Santic U. Desnica 1992 Proc. 4th Intl. Conf. InP and Related Materials IEEE New York 511 511 R. Fornari, B. Santic and U. Desnica, Proc. 4th Intl. Conf. InP and Related Materials, 1992, Newport, USA (New York:IEEE), p. 511.
9. 9. K. Kuriyama K. Tomizawa M. Kashiwakura K. Yokoyama 1994 J. Appl. Phys. 76 3552 3552 10.1063/1.357413 1:CAS:528:DyaK2cXms1yksbg%3D K. Kuriyama, K. Tomizawa, M. Kashiwakura and K. Yokoyama, J. Appl. Phys. 76, 3552 (1994).
10. 10. M. Uchida K. Kainosho M. Ohta O. Oda 1998 J. Electron. Mater. 27 8 8 1:CAS:528:DyaK1cXjvFarsQ%3D%3D M. Uchida, K. Kainosho, M. Ohta and O. Oda, J. Electron. Mater. 27, 8 (1998).
11. 11. T. Takanohashi K. Nakajima 1989 J. Appl. Phys. 65 3933 3933 10.1063/1.343358 1:CAS:528:DyaL1MXktFCksL4%3D T. Takanohashi and K. Nakajima, J. Appl. Phys. 65, 3933 (1989).
12. 12. D. C. Look 1983 R.K. Willardson A.C. Beer Semiconductors and Semimetals, 19 Academic Press New York 75 75 D. C. Look, Semiconductors and Semimetals, 19, ed. R.K. Willardson and A.C. Beer (New York: Academic Press, 1983), p. 75.
13. 13. F.X. Zach 1994 J. Appl. Phys. 75 7894 7894 10.1063/1.356575 1:CAS:528:DyaK2cXkvFKruro%3D F.X. Zach, J. Appl. Phys. 75, 7894 (1994).
14. 14. Not published.
15. 15. G. Hirt T. Mono G. Muller 1994 Mater. Sci. and Engr. B 28 101 101 10.1016/0921-5107(94)90025-6 1:CAS:528:DyaK2MXisFegt7Y%3D G. Hirt, T. Mono and G. Muller, Mater. Sci. and Engr. B 28, 101 (1994).
16. 16. P. Dreszer W.M. Chen D. Wasik R. Leon W. Walukiewicz B.W. Liang C.W. Tu E.R. Weber 1993 J. Electron. Mater. 22 1487 1487 1:CAS:528:DyaK2cXht1Wmu78%3D P. Dreszer, W.M. Chen, D. Wasik, R. Leon, W. Walukiewicz, B.W. Liang, C.W. Tu and E.R. Weber, J. Electron. Mater. 22, 1487 (1993).
17. 17. B.W. Liang P.Z. Lee D.W. Shih C.W. Tu 1992 Appl. Phys. Lett. 60 2104 2104 10.1063/1.107103 1:CAS:528:DyaK38Xis1Kntbs%3D B.W. Liang, P.Z. Lee, D.W. Shih and C.W. Tu, Appl. Phys. Lett. 60, 2104 (1992).